By D. J. Fisher
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Extra resources for A Directory of Arrhenius Parameters: Non-metals
These data extended previous measurements by 2 orders of magnitude at low temperatures. Haller: Semiconductor Science and Technology, 2006, 21, 758-62  Ge: Sn Diffusion The diffusion of Sn in intrinsic Ge was studied, at 555 to 930C, by means of secondary ion mass spectrometry. The Sn was in-diffused, under vacuum, from the gas phase or from thin films. In both cases, the pure metal was used as a source of Sn. 26(eV)/kT] It was concluded that Sn in Ge diffused via a mono-vacancy mechanism.
It was concluded that only one undetermined, but simple, diffusion mechanism operated under the conditions used. Willoughby: Journal of the Electrochemical Society, 1981, 128, 2224-8  GaAs: Ga Diffusion The diffusion of implanted Zn was studied, at 625 to 850C, by means of secondary ion mass spectrometry. A substitutional-interstitial diffusion mechanism was suggested to explain how deviations of the local Ga interstitial concentration from its equilibrium value regulated Zn diffusion.
Shaw: Physica Status Solidi A, 1984, 86, 629-35  GaAs: Sn Diffusion The diffusive behavior of Sn was studied at 800 to 1000C. Kudo: Japanese Journal of Applied Physics, 1975, 14, 717-8  GaAs: Te Diffusion The diffusive behavior of Te was studied at 1000 to 1150C. Khludkov: Izvestiya Akademii Nauk SSSR – Neorganicheskie Materialy, 1974, 10, 228-30  GaAs: V Diffusion The diffusion of V was studied in V-doped GaAs layers grown by metalorganic chemical vapor deposition using secondary ion mass spectroscopy.